PRODUCTS
Home > PRODUCTS > RealLight
RealLight
![[ RealLight ]<br>GS04 / GS11 / GS12<br>Conduction-cooled Vertical Stacked<br>Diode Laser Array](/thum_img/mjct/goods_img3/edb085cfeb7c590c93348a8c0b208b39_water_4de0b559c44a49f5f544fca08f3bc282_c0_w300_h300.jpg)
)
GS04 Conduction-cooled Vertical Stacked Diode Laser Array
GS04 conduction-cooled vertical stacked diode laser array is RealLight’s self-developed component in μs-level applications, which features compact design, high power density,and small emitting size.
- AuSn solder for packaging
- Compact design
- High peak power density
- High reliability
|
Optical Parameters |
||
|
Part Number |
R808±3-Q640-GS04-3*8 |
R808±3-Q1200-GS04-5*12 |
|
Center Wavelength λc（nm） |
808 |
|
|
Wavelength Tolerance δλc（nm） |
±3 |
|
|
Output Power per Bar（W） |
80 |
100 |
|
Number of Bars |
8 |
12 |
|
Bar-to-Bar Pitch（mm） |
~0.4 |
|
|
Spectral Width（FWHM）（nm） |
<5 |
|
|
Slope Efficiency per Bar (W/A) |
>1.0 |
|
|
Fast Axis Divergence Angle（FWHM）（°） |
40 |
|
|
Slow Axis Divergence Angle（FWHM）（°） |
10 |
|
|
Wavelength Temperature Coefficient（nm/℃） |
~0.3 |
|
|
Electrical Parameters |
||
|
EO Conversion Efficiency（%） |
>48 |
|
|
Threshold Current Ith（A） |
<12 |
<17 |
|
Operating Current Iop（A） |
<85 |
<130 |
|
Operating Voltage Vop of each Bar（V） |
<2 |
|
|
Duty Cycle（%） |
<0.8 |
|
|
Pulse Width（μs） |
<300 |
|
|
Repetition Rate（Hz） |
<30 |
|
|
Environment Parameters |
||
|
Operating Temperature（℃） |
0~45 |
|
|
Storage Temperature（℃） |
0~55 |
|
1.Wavelengths from 940nm to 960nm available upon request.
2.Wavelengths from 792nm to 818nm available upon request.
3.Do not operate it beyond normal operating conditions, otherwise, the service life of the device might be shortened.
4.Make sure that there is no condensation in operating or storage environment.
5.All above parameters are measured in QCW mode.
GS11 Conduction-cooled Vertical Stacked Diode Laser Array
GS11 conduction-cooled vertical stacked diode laser array is developed by RealLight independently, it realized to be used in ms-level applications from μs-level. This laser component integrates sealed optical windows with dust proof function, which is available to monitor temperature, and can meet with the customers’ applications in different environments.
- AuSn solder for packaging
- High conversion efficiency
- High peak power
- High reliability
|
Optical Parameters |
|
|
Part Number |
R808±10-Q480-GS11-10*4 |
|
Center Wavelength λc（nm） |
808 |
|
Wavelength Tolerance δλc（nm） |
±10 |
|
Output Power per Bar（W） |
120 |
|
Number of Bars |
4 |
|
Bar-to-Bar Pitch（mm） |
1.65 |
|
Spectral Width（FWHM）（nm） |
<5 |
|
Slope Efficiency per Bar (W/A) |
>1.1 |
|
Fast Axis Divergence Angle（FWHM）（°） |
40 |
|
Slow Axis Divergence Angle（FWHM）（°） |
10 |
|
Wavelength Temperature Coefficient（nm/℃） |
~0.3 |
|
Electrical Parameters |
|
|
EO Conversion Efficiency（%） |
>50 |
|
Threshold Current Ith（A） |
<15 |
|
Operating Current Iop（A） |
<130 |
|
Operating Voltage Vop of each Bar（V） |
<2 |
|
Duty Cycle（%） |
<2 |
|
Pulse Width（μs） |
<3000 |
|
Repetition Rate（Hz） |
<100 |
|
Environment Parameters |
|
|
Operating Temperature（℃） |
20~35 |
|
Storage Temperature（℃） |
0~55 |
1.Wavelengths from 940nm to 960nm available upon request.
2.Wavelengths from 792nm to 818nm available upon request.
3.Do not operate it beyond normal operating conditions, otherwise, the service life of the device might be shortened.
4.Make sure that there is no condensation in operating or storage environment.
GS12 Conduction-cooled Vertical Stacked Diode Laser Array
GS12 series conduction-cooled vertical stacked diode laser array is RealLight’s self-developed laser component for wide-temperature applications. It is high-peak-power, compact and easy-to-integrate.
- AuSn solder for packaging
- High peak power
- High reliability
- Multi wavelength integration
|
Optical Parameters |
||
|
Part Number |
RXXX±3-QXXXX-GS12-10*XX |
|
|
Center Wavelength λc（nm） |
796~808 |
|
|
Wavelength Tolerance δλc（nm） |
±3 |
|
|
Output Power per Bar（W） |
≥200 |
≥100 |
|
Number of Bars |
1~5 |
|
|
Bar-to-Bar Pitch（mm） |
~0.43 |
|
|
Spectral Width（FWHM）（nm） |
<6 |
|
|
Slope Efficiency per Bar (W/A) |
>1.1 |
|
|
Fast Axis Divergence Angle（FWHM）（°） |
40 |
|
|
Slow Axis Divergence Angle（FWHM）（°） |
12 |
|
|
Wavelength Temperature Coefficient（nm/℃） |
~0.3 |
|
|
Electrical Parameters |
||
|
EO Conversion Efficiency（%） |
>50 |
|
|
Threshold Current Ith（A） |
<35 |
<15 |
|
Operating Current Iop（A） |
<220 |
<120 |
|
Operating Voltage Vop of each Bar（V） |
<2.1 |
|
|
Duty Cycle（%） |
<0.8 |
|
|
Pulse Width（μs） |
<300 |
|
|
Repetition Rate（Hz） |
<30 |
|
|
Environment Parameters |
||
|
Operating Temperature（℃） |
-40~70 |
|
|
Storage Temperature（℃） |
-60~80 |
|
1. Wavelengths from 940nm to 960nm available upon request.
2. Wavelengths from 792nm to 818nm available upon request.
3. Do not operate it beyond normal operating conditions, otherwise, the service life of the device might be shortened.
4. Operating and storage environment must be free of dew, the cleanliness must reach ISO Class4.
5. The above parameters are measured under QCW mode with pulse width of 200μs and repetition rate of 30Hz at 25℃.
